| Abstract: | We study a Si-based diode with a p+nn+ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulations and theoretical analysis, single device has demonstrated reliable operation at 2.3 kV, 89 ps risetime, and high output dV/dt(30 kV/ns). As a contribution to the optimal design, some conclusions about trade-off are drawn by changing structure parameters and physical parameters. |
