A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy |
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| Institution: | 1. Semiconductor Business, Samsung Electronics, Hwasung 445-701, Republic of Korea;2. Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea;3. National Center for Nanomaterials Technology (NCNT), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea;1. Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea;2. Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea;1. Raja Ramanna Centre for Advanced Technology, Indore, India;2. Homi Bhabha National Institute, Mumbai, India;3. UGC-DAE CSR Kalpakkam Node, Kokilamedu, Tamil Nadu, India;4. Bhabha Atomic Research Centre, AnushaktiNagar, Mumbai, India;1. Institute of Materials Science, TU Bergakademie Freiberg, 09599 Freiberg, Germany;2. NaMLab gGmbH, 01187 Dresden, Germany;3. Faculty of Mathematics and Physics, Charles University Prague, 121 16 Prague, Czech Republic;4. Institute of Experimental Physics, TU Bergakademie Freiberg, 09599 Freiberg, Germany;5. Nanoelectronic Materials, TU Dresden, 01187 Dresden, Germany;1. School of Aerospace, Mechanical, Mechatronic Engineering, The University of Sydney, NSW 2006, Australia;2. Australian Centre for Microscopy and Microanalysis, The University of Sydney, NSW 2006, Australia;3. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK;4. School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia |
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| Abstract: | Threshold switching is a phenomenon where the resistivity of an insulating material changes and the insulator exhibits metallic behavior. This could be explained by phase transformation in oxide materials; however, this behavior is also seen in amorphous insulators. In this study, through an ex-situ experiment using transmission electron microscopy (TEM), we proved that threshold switching of amorphous NbO2 accompanies local crystallization. The change in I–V characteristics after electroforming was examined by evaluating the concentration profile. Atom probe tomography (APT) combined with in-situ TEM probing technique was performed to understand the threshold switching in amorphous NbO2. The local crystallization in amorphous NbO2 was validated by the observed difference in time-of-flight (ToF) between amorphous and crystalline NbO2. We concluded that the slower ToF of amorphous NbO2 (a-NbO2) compared with crystalline NbO2 (c-NbO2) is due to the resistivity difference and trap-assisted recombination. |
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| Keywords: | Threshold switching Voltage drop Atom probe Local crystallization |
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