Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays |
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| Institution: | 1. State Key Laboratory for Supperlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China;4. Beijing Academy of Quantum Information Sciences, Beijing 100193, China;1. Optoelectronic Device Laboratory, School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, People’s Republic of China;2. Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom;3. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, People’s Republic of China |
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| Abstract: | In this paper, we present an InAs/GaSb type-II superlattice (SL) with the M-structure for the fabrication of a long-wavelength (10 μm range) infrared (LWIR) focal plane arrays (FPA), which are grown by molecular beam epitaxy (MBE). The M-structure is named for the shape of the band alignment while the AlSb layer is inserted into the GaSb layer of InAs/GaSb SL. A 320 × 256 LWIR FPA has been fabricated with low surface leakage and high R0A product of FPA pixels by using anodic sulfide and SiO2 physical passivation. Experiment results show that the devices passivated with anodic sulfide obviously have higher R0A than the un-sulphurized one. The 50% cutoff wavelength of the LWIR FPA is 9.1 μm, and the R0A is 224 Ω cm2 with the average detectivity of 2.3 × 1010 cm Hz1/2 W?1. |
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| Keywords: | Superlattice GaSb Long-wavelength infrared detector Focal plane array |
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