| Institution: | 1. Max-Planck-Institute for Chemical Physics of Solids, Nöthnitzer-Str. 40, 01187 Dresden, Germany;2. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii Prospekt 59, 119333 Moscow, Russia;3. Institut für Anorganische und Analytische Chemie, Johannes Gutenberg – Universität, Duesbergweg 10-14, 55099 Mainz, Germany;4. Institute of Solid State Physics, Russian Academy of Sciences, Academician Ossipyan Str. 2, 142432, Chernogolovka, Moscow District, Russia;5. Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. College of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China;1. Mathematics & Basic Sciences, NIIT University, NH-8, Delhi-Jaipur Highway, Rajasthan 301 705, India;2. Department of Mathematics, National Institute of Technology, Tiruchirappalli-620 015, Tamil Nadu, India;1. Department of Physics, Quaid-i-Azam University, Islamabad, Pakistan;2. Energy & Environmental Materials Division, Korea Institute of Ceramic Engineering & Technology, Jinju 52861, Republic of Korea;1. Depto Electricidad y Electrónica, Universidad del País Vasco UPV/EHU, 48940 Leioa, Spain;2. Ural Federal University, Institute of Natural Sciences, 620002 Ekaterinburg, Russia;3. Institute of Electrophysics UD RAS, 620016 Ekaterinburg, Russia;4. Department of Physics, University of Maryland, College Park, MD 20742, USA;5. Advanced Research Facilities (SGIKER), Universidad del País Vasco UPV/EHU, 48080 Bilbao, Spain;1. Grup de Magnetisme, Dept. Física Fonamental, Facultat de Física, Universitat de Barcelona, Martí i Franquès 1, planta 4, edifici nou, 08028 Barcelona, Spain;3. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China |
