Carrier density distribution in silicon nanowires investigated by scanning thermal microscopy and Kelvin probe force microscopy |
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| Institution: | 1. Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland;2. Instytut Technologii Elektronowej – ITE Warsaw, Division of Silicon Microsystem and Nanostructure Technology, al. Lotników 32/46, PL-02668 Warsaw, Poland;1. Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, China;2. Nanjing Institute of Future Energy System, Nanjing 211135, China;3. University of Chinese Academy of Sciences, Beijing 100049, China;4. Innovation Academy for Light-duty Gas Turbine, Chinese Academy of Sciences, Beijing 100190, China;1. College of Materials Science and Engineering, Shenzhen Key Laboratory of Microscale Optical Information Technology, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, PR China;2. College of Electronic Science and Technology, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, PR China;3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai, 200050, PR China;4. Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis, #08-03, 138634, Singapore;5. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, PR China |
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| Abstract: | The use of scanning thermal microscopy (SThM) and Kelvin probe force microscopy (KPFM) to investigate silicon nanowires (SiNWs) is presented. SThM allows imaging of temperature distribution at the nanoscale, while KPFM images the potential distribution with AFM-related ultra-high spatial resolution. Both techniques are therefore suitable for imaging the resistance distribution. We show results of experimental examination of dual channel n-type SiNWs with channel width of 100 nm, while the channel was open and current was flowing through the SiNW. To investigate the carrier distribution in the SiNWs we performed SThM and KPFM scans. The SThM results showed non-symmetrical temperature distribution along the SiNWs with temperature maximum shifted towards the contact of higher potential. These results corresponded to those expressed by the distribution of potential gradient along the SiNWs, obtained using the KPFM method. Consequently, non-uniform distribution of resistance was shown, being a result of non-uniform carrier density distribution in the structure and showing the pinch-off effect. Last but not least, the results were also compared with results of finite-element method modeling. |
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| Keywords: | Silicon nanowires Scanning thermal microscopy Kelvin probe force microscopy Carrier density distribution Pinch-off effect |
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