|
|||||
|
|
Nanocrystalline‐Graphene‐Tailored Hexagonal Boron Nitride Thin Films |
|
| Authors: | Kang Hyuck Lee Dr. Hyeon‐Jin Shin Dr. Brijesh Kumar Han Sol Kim Jinyeong Lee Dr. Ravi Bhatia Dr. Sang‐Hyeob Kim In‐Yeal Lee Dr. Hyo Sug Lee Prof. Gil‐Ho Kim Prof. Ji‐Beom Yoo Dr. Jae‐Young Choi Prof. Sang‐Woo Kim |
| Affiliation: | 1. School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 440‐746 (Republic of Korea);2. Samsung Advanced Institute of Technology, Yongin 446‐712 (Republic of Korea);3. NUSNNI‐NanoCore, National University of Singapore, T‐Lab Level 11, 5A Engineering Drive 1, 117580 (Singapore);4. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 440‐746 (Republic of Korea);5. Electronics and Telecommunications Research Institute, Daejeon, 305‐700 (Republic of Korea) |
| Abstract: | Unintentionally formed nanocrystalline graphene (nc‐G) can act as a useful seed for the large‐area synthesis of a hexagonal boron nitride (h‐BN) thin film with an atomically flat surface that is comparable to that of exfoliated single‐crystal h‐BN. A wafer‐scale dielectric h‐BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc‐G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc‐G‐tailored h‐BN thin film was systematically analyzed. This approach provides a novel method for preparing high‐quality two‐dimensional materials on a large surface. |
| Keywords: | boron nitride chemical vapor deposition electron microscopy graphene nanostructures |