(1) New Materials Research Center, SANYO Electric Co., Ltd., 1-1 Dainichi Higashimachi, Moriguchi, Osaka 570, Japan;(2) Institute of Advanced Material Study, Kyushu University, 6-1, Kasugakoen, Kasuga, Fukuoka 816, Japan
Abstract:
The possibility of a super-resolution optical memory using a photochromic mask layer was theoretically discussed. An equation which estimates the transmittance change of the mask layer was derived. The numerical simulation based on the equation showed that the reflectance increase of the layer by photo-irradiation is nonlinear when the optical density of the layer is high. The nonlinear response decreased the crosstalk in adjacent recording tracks and improved the MTF (modulation transfer function) characteristics, resulting in a higher recording density.