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ECRCVD技术淀积太阳电池的减反膜
引用本文:杨银堂,秦捷.ECRCVD技术淀积太阳电池的减反膜[J].光子学报,1997,26(6):504-508.
作者姓名:杨银堂  秦捷
作者单位:[1]西安电子科技大学微电子研究所 [2]中国科学院西安光学精密机械研究所
摘    要:本文报道了用电子回旋共振化学气相淀积(ECRCVD)技术实现了低温(50℃)淀积SiON/SiN膜作硅太阳电池减反射膜的实验研究.探讨了影响薄膜性能的主要工艺参数,设计了具有较佳抗反效果的双层减反膜,并对膜层的反射率和太阳电池参数进行了测定.结果表明:该减反膜具有良好的减反效果,能实现较宽波段范围内的均匀增透,使太阳电池短路电流密度提高了42%,电池转换效率提高了45%.

关 键 词:电子回旋共振化学气相淀积  太阳电池  减反膜
收稿时间:1996-09-10

ECRCVD OF ANTIREFLECTION COATINGS FOR SI SOLAR CELLS
Yang Yintang,Fu Junxing.ECRCVD OF ANTIREFLECTION COATINGS FOR SI SOLAR CELLS[J].Acta Photonica Sinica,1997,26(6):504-508.
Authors:Yang Yintang  Fu Junxing
Institution:1. Microelectronic Institute, Xidian University, Xi’an 710071;2. Xi’an institute of Optics &; Precision Mechanics, Academia Sinica Xi’an, 710068
Abstract:Silicon oxynitride and silicon nitride double layer antireflection(AR) coatings for St solar cells are prepared by the electron cyclotron resonance chemical vapor deposition(ECRCVD)method at low substrate temperature (50℃). The AR coatings for silicon cells have been optimized theoritically and the mechanism of ECRCVD of SiON/SiN film growth is studied thoroughly by varying process parameters,such as substrate temperature,reactant gas ratio and total pressure,etc. The parameters of St cells with double-layer AR coatings are measured. The results show that the antireflection performance of the film is. good and the SiON/SiN coatings improve the short-circuit current(Jsc)by 42%, achieving 27mA/cm2, opencircuit voltage (Voc) by 3%, to be 680mV, and the practicalconversion efficiency by 45%.
Keywords:Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD)  Antireflection (AR)coatings  Solar cells
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