Raman spectroscopy of resonance exciton tunneling in GaAs/AlAs superlattices in electric fields |
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| Authors: | V F Sapega T Ruf M Cardona H T Grahn K Ploog |
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| Institution: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;(2) Max Planck Institute of Solid State Physics, Germany;(3) Paul Drude Institute of Solid State Electronics, Germany |
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| Abstract: | Optical-resonance-Raman scattering by acoustic phonons is used to study the effect of an electric field on the state of excitons
in GaAs/AlAs superlattices. When the energy of the exciting photon coincides with the energy of an exciton bound to Wannier-Stark
states of a heavy hole and electron with Δn=0,±1, the acoustic Raman scattering is enhanced. Oscillations in the intensity of the Raman spectrum in the electric field
are explained by resonance delocalization of the exciton ground state as it interacts with Wannier-Stark states of neighboring
quantum wells or with Wannier-Stark states of a higher electron miniband.
Fiz. Tverd. Tela (St. Petersburg) 40, 827–829 (May 1998) |
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