Microstructures of patterned nc-Si superlattices made by pulsed laser interference crystallization |
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Authors: | L. Y. Zhu X. F. Huang W. B. Fan X. W. Wang W. Li L. Wang K. J. Chen |
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Affiliation: | National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China |
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Abstract: | We employed atomic force microscopy, cross-section transmission electron microscopy and high-resolution electron microscopy to investigate the microstructures and surface morphology of laser interference crystallized a-Si : H/a-SiNx : H superlattices. The experimental results show that Si nanocrystallites (nc-Si) are formed within the initial a-Si : H sublayers and are patterned in certain regions with the same periodicity of 2.0 μ m as the phase-shifting mask grating. The size of nc-Si is limited by adjacent a-SiN x: H sublayers due to the constrained crystallization effect so it is possible to use this crystallization method to get a three-dimensional ordered nc-Si array. |
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Keywords: | nanocrystal Si superlattices laser-induced crystallization excimer laser phase-shifting mask grating. |
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