Thickness dependent formation and properties of GdSi2/Si(100) interfaces

Epitaxial and polycrystalline orthorhombic GdSi₂ films were grown on Si(100) substrates by solid phase reaction between Si and Gd films at different thicknesses of the Gd film . The most important property of these GdSi₂/Si interfaces was defect formation. This was investigated by studying the properties of the Schottky barriers by means of current voltage and capacitance–voltage characteristics, deep level transient spectroscopy by double crystal X-ray diffractometry, and transmission electron microscopy. Epitaxial growth of the silicide layer ensured a relatively low interface defect density (about 10¹⁰ cm^-2), while the non-epitaxial growth induced defects of a much higher density (about 10¹² cm^-2). The defects generated during the silicide formation are located within a depth of about 10 nm from the GdSi₂/Si interface. PACS 68.55.-a; 73.40.-c; 81.15-zThis revised version was published in March 2005. References 10-17 were added in the online version (pdf file).