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Ultrahigh resolution characterisation of compound semiconductors using pulsed laser atom probe techniques |
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| Authors: | R.A.D. Mackenzie J.A. Liddle C.R.M. Grovenor |
| Affiliation: | Department of Materials, Oxford University, Parks Road, Oxford OX1 3PH, UK 1 Now at: AT&T Bell Laboratories, Murray Hill, NJ 07974, USA |
| Abstract: | The pulsed laser atom probe has been used to characterise III-V semiconductor epilayer and quantum-well structures. The combination of high spatial resolution and good chemical specificity makes it possible to observe very fine scale composition variations in epilayer materials, and also to assess the roughness of individual interfaces in quantum-well material. |
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