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AES Depth profiling of semiconducting multilayer structures using an ion beam bevelling technique |
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| Authors: | M. Procop A. Klein I. Rechenberg D. Krüger |
| Affiliation: | Bundesanstalt für Materialforschung und -prüfung, D-12200 Berlin, Germany, DE Ferdinand-Braun-Institut für H?chstfrequenztechnik, Rudower Chaussee 5, D-12484 Berlin, Germany, DE Institut für Halbleiterphysik, PSF 409, D-15204 Frankfurt/Oder, Germany, DE |
| Abstract: | An ion beam technique has been developed which allows the preparation of bevels from semiconducting heteroepitaxial structures with smooth surfaces and very flat angles in the order of 0.1°. The bevels are used for AES depth profiling of heterostructures by the line scan technique. Measured and calculated line scans from (Al,Ga)As/GaAs and SiGe/Si test structures are compared to estimate the contributions of the electron escape depth and the ion beam mixing to the depth resolution. Received: 21 August 1996 / Revised: 14 January 1997 / Accepted: 18 January 1997 |
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