Doping profile techniques for Si epitaxial layers |
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| Authors: | P Gaworzewski L Kalman H Rausch M Trapp |
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| Institution: | (1) Institut für Physik der Werkstoffbearbeitung der AdW der DDR, Seestr. 82, 1166 Berlin;(2) Research Institute for Telecommunication, 114 P.O. Box 15, Budapest, (Hungary);(3) VEB Werk für Fernsehelektronik Berlin, Ostendstr. 1-5, 116 Berlin |
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| Abstract: | Various methods (e.g. spreading resistance and C-V measurements, neutron activation analysis, SIMS) have been used to determine
concentration distributions of antimony dopant and charge carriers in single and double epitaxial silicon layers. Comparing
the results obtained by the methods, an increased dopant diffusion process could be observed in the epitaxial layer during
neutron irradiation of the sample, which arose as a systematic error in the NAA method. The origin of the deviations is discussed.
6th Colloquium on Microwawe Communication, Budapest, 29th August-1st September 1978. |
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