| Ka波段AlGaAs/InGaAs低噪声PHEMT异质材料结构的计算机优化与实验结果 |
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| 引用本文： | 陈效建.Ka波段AlGaAs/InGaAs低噪声PHEMT异质材料结构的计算机优化与实验结果[J].电子学报,1998,26(11):120-123. |
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| 作者姓名： | 陈效建 |
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| 作者单位： | 南京电子器件研究所,南京,210016 |
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| 摘 要： | 讨论了毫米波低噪声ＰＨＥＭＴ的设计要点，藕助Ｓｃｈｒｏｅｄｉｎｇｅｒ／Ｐｏｉｓｓｏｎ方程及器件方程，进行了Ｋａ波段ＡｌＧａ／ＩｎＧａＡｓ低噪声ＰＨＥＭＴ用异质层数值计算及ＣＡＤ优化，确定出分子束外延ＭＢＥ时诸层的最佳组分、浓度、与厚度、上述优化分析的结果用于器件的实验研制，取得了３４．４ＧＨｚ下噪声系数（ＮＦ）１．９２ｄＢ、相关增益Ｇａ６．５ｄＢ的国内最好结果。
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| 关 键 词： | AlGaAs/InGaAs低噪声 赝配高速电子迁移率晶体管 CAD Schroedinger/Poisson方程解析器 优化 |
CAD Optimization and Experimental Result of Hetero-Layer-Structure for Ka-Band AlGaAs/InGaAs Low Noise PHEMTs |
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| Abstract: | The design keys for mm-wave low-noise PHEMT have been discussed in detail. By use of Schroedinger-/Poisson equation and the well-known device equations, numerical calculation and CAD optimization for the hetero-layer-structure parameters of the device have been completed. Therefore, theoptimized composition, doping level and thickness of the hetero-layers have been determined. Based on the analysis, the developed device has the performance: NF of 1. 92 dB with Ga of 6. sclB at 34z.4Gfu, which is the best result so far in China. |
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| Keywords: | AlGaAs/InGaALs low-noise PHEMT CAD Schroedinger/Poisson equation solver Optimization |
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