Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor |
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Authors: | Meihan Wang Hao Lei Yoshiyuki Seki Shigeyuki Seki Yutaka Sawada Yoichi Hoshi Shaohong Wang Lixian Sun |
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Affiliation: | 1. Scientific Research Center, Shenyang University, No. 21 Wanghua South Street, Shenyang, 110044, China 2. Department of Surface Engineering of Materials, Institute of Metal Research, CAS, No. 72 Wenhua Road, Shenyang, 110016, China 3. Center for Hyper Media Research, Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa, 243-0297, Japan 4. Department of Electronic Engineering, Sendai National College of Technology, 4-16-1 Ayashichuo, Aoba-ku, Sendai, Miyagi, 989-3128, Japan 5. Materials and Thermochemistry Laboratory, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
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Abstract: | Partly crystallized amorphous indium oxide thin films were deposited under water vapor atmosphere by magnetron sputtering. XRD analysis revealed that appropriate water vapor could suppress the film’s crystallinity. In situ thermal crystallization process was monitored by high-temperature XRD. The crystallization data were analyzed using the Kolmogorov–Johnson–Mehl–Avrami equation. The kinetic exponent n is determined to be approx. 1/2 and 3/2 for film deposited in the absence and the presence of water vapor, respectively. The activation energy of crystallization for film deposited under 1 × 10?5 Torr water vapor pressure was determined to be 30.7 kJ mol?1, which is higher than 18.9 kJ mol?1 for film deposited in the absence of water vapor. The increased activation energy caused by the chemically bonded hydrogen and embedded O–H bonds from the water vapor resulted in the suppression of crystallization. Introduction of appropriate water vapor during the deposition decreased the resistivity because of the increase of Hall mobility. The resistivity of the films after annealing increased due to the evaporation of water vapor resulted in crystal defects. |
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