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p型Si上Ni—Pd薄膜的电化学制备及其表征
引用本文:张国庆 龚正烈. p型Si上Ni—Pd薄膜的电化学制备及其表征[J]. 应用化学, 1997, 14(2): 20-23
作者姓名:张国庆 龚正烈
作者单位:天津大学应用化学系,天津理工学院
摘    要:采用控电位沉积方式在p型Si上制备了Ni-Pd合金薄膜;考察了合金的阴极沉积和阳极溶出行为;研究了极化方式对膜组成、厚度、结构及形貌的影响.结果表明,在沉积初期,膜主要以层状方式生长,当膜增厚或阴极极化增强时,则以岛状形式生长.X射线衍射测试表明,Ni-Pd合金呈面心立方结构,其晶面间距随合金组成不同而变化.

关 键 词:镍钯合金,电沉积,p型硅
收稿时间:1996-06-20

Electrochemical Preparation of Ni Pd Film on p type Silicon and Its Characterization
Zhang Guoqing ,Liu Bing,Yao Suwei,Guo Hetong. Electrochemical Preparation of Ni Pd Film on p type Silicon and Its Characterization[J]. Chinese Journal of Applied Chemistry, 1997, 14(2): 20-23
Authors:Zhang Guoqing   Liu Bing  Yao Suwei  Guo Hetong
Affiliation:Zhang Guoqing *,Liu Bing,Yao Suwei,Guo Hetong
Abstract:Nickel palladium alloy film was prepared on p type silicon using potential controlled electrodeposition. Cathodic deposition and anodic stripping behavior were investigated as well. The influence of polarization style on the composition, thickness, morphology and structure of film was studied by means of energy dispersive X ray analysis, X ray diffraction (XRD) and scanning electron microscope(SEM). SEM showed that at the initial stage nickel palladium forms a layered structure, with the film growing and the polarization enhanced, an island growth was found. XRD indicated that nickel palladium alloy has a face centered cubic structure and the distance between crystal planes changes with the composition of deposit.
Keywords:nickel palladium alloy  electrodeposition  p type silicon  
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