| 考虑量子化效应的MOSFET阈值电压解析模型 |
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| 引用本文： | 代月花,陈军宁,柯导明,孙家讹.考虑量子化效应的MOSFET阈值电压解析模型[J].物理学报,2005,54(2):897-901. |
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| 作者姓名： | 代月花 陈军宁 柯导明 孙家讹 |
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| 作者单位： | 安徽大学电子科学与技术学院,合肥 230039 |
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| 基金项目： | 国家自然科学基金（批准号：60276042）和安徽省自然科学基金（批准号：01044104）资助 的课题. |
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| 摘 要： | 根据改进后的三角势阱场近似，并考虑量子化效应，提出了一种基于物理的阈值电压解析模型，给出了MOSFET的阈值电压解析表达式，并与经典理论和数值模拟结果进行了比较.
关键词：
量子效应
阈值电压
反型层
表面势
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| 关 键 词： | 量子效应 阈值电压 反型层 表面势 |
| 收稿时间： | 6/1/2004 12:00:00 AM |
An analytical model of MOSFET threshold voltage with considiring the quantum effects |
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| Dai Yue-Hua,Chen Jun-Ning,Ke Dao-Ming,Sun Jia-E.An analytical model of MOSFET threshold voltage with considiring the quantum effects[J].Acta Physica Sinica,2005,54(2):897-901. |
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| Authors: | Dai Yue-Hua Chen Jun-Ning Ke Dao-Ming Sun Jia-E |
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| Abstract: | Based on the improved approximation of modified triangular potential well, a phy sical_based model of MOSFETs threshold voltage is presented, as well as its anal ytical formulation. The new model takes quantum effects into account for future generation MOS devices and integration circuits. The calculated results by using the new model agree with the simulation results very well. |
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| Keywords: | quantum effects threshold voltage inversion layer surface potential |
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