单边掺杂InAlAs/InGaAs单量子阱中二维电子气的磁输运特性

研究了双子带占据的In_0.52Al_0.48As/In_0.53Ga_{0 .47}As单量子阱中磁电阻的Shubnikov-de Haas(SdH)振荡效应和霍耳效应，获得了不 同子带电子的浓度、迁移率、有效质量和能级位置.低磁感应强度(B＜1.5T)下由迁移率谱和 多载流子拟合相结合的方法得到的各子带电子浓度与通过SdH振荡得到的结果一致.在d ²ρ/dB²-1/B的快速傅里叶变换 关键词： InAlAs/InGaAs单量子阱 SdH振荡 二维电子气 磁致子带间散射

Magneto-transport characteristics of two-dimensional electron gas for Si б-doped InAlAs/InGaAs single quantum well

Magneto-transport measurements have been carried out on a Si heavily δ-doped In _0.52Al_0.48As/In_0.53Ga_0.47As single q uantum well in the temperature range between 1.5 and 60K under magnetic field up to 10T. We studied the Shubnikov-de Haas(SdH) effect and the Hall effect for th e In_0.52Al_0.48As/In_0.53Ga_0.47As sing le quantum well occupied by two subbands，and have obtained the electron concent ration, mobility, effective mass and energy levels respectively. The electron co ncentrations of the two subbands derived from mobility spectrum combined with mu lti-carrier fitting analysis are well consistent with the result from the SdH os cillation. From fast Fourier transform analysis for d²ρ/dB^{2-1/B，it is observed that there is a frequency of f₁-f₂ insensitive to the temperature, besides the frequencies f₁, f_{2< /sub> for the two subbands and the frequency doubling 2f1, both depen dent on the temperature. This is because that the electrons occupying the two di fferent subbands almost have the same effective mass in the quantum well and the magneto-intersubband scattering between the two subbands is strong.}}