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Growth of height-controlled InGaN quantum dots on GaN |
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| Authors: | Il-Kyu Park Seong-Ju Park Chel-Jong Choi |
| Institution: | 1. LED-IT Fusion Technology Research Center and Department of Electronic Engineering, Yeungnam University, Gyeongbuk 712-749, Republic of Korea;2. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea;3. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea |
| Abstract: | InGaN height-controlled quantum dots (HCQDs) were grown by alternately depositing In0.4Ga0.6N QD and In0.1Ga0.9N spacer layers on a seed In0.4Ga0.6N QD layer. Structural and optical studies showed that the height of the InGaN QDs was controlled by the deposition cycle of In0.4Ga0.6N/In0.1Ga0.9N layers. Photoluminescence studies showed that the In0.4Ga0.6N HCQDs provided deep potential wells and the piezoelectric field-induced quantum-confined Stark effect was negligibly small. These phenomena are attributed to variation in quantum confinement energy in the electronically coupled InGaN HCQDs providing deep potential wells. |
| Keywords: | A1 Growth models A1 Low dimensional structures A3 Metalorganic chemical vapor deposition B1 Nitrides B2 Semiconducting III&ndash V materials B3 Light-emitting diodes |
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