Growth of AlN single crystalline boules |
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Authors: | Z.G. Herro D. ZhuangR. Schlesser Z. Sitar |
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Affiliation: | Department of Materials Science and Engineering, North Carolina State University, 1001 Capability Drive, Raleigh, NC 27695-7919, USA |
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Abstract: | We have obtained high-quality, crack-free AlN wafers using a convex thermal field inside the growth chamber. Free-standing AlN boules of 15 mm in height and 15 mm in diameter were grown. The carbon concentration was found to be similar in all parts of the boule (∼8×1018 cm−3) while the initial O concentration was higher (∼1×1019 cm−3) and slightly decreased during growth. It was found that O incorporated differently on different crystallographic faces. High resolution XRD showed a continuous improvement in crystal quality as a function of boule length. The full width at half maximum (FWHM) of the double crystal rocking curves decreased from 78 in at the beginning of growth to 13 in at the growth end. To the best of our knowledge, this is the first report on impurity incorporation on different crystallographic facets obtained from the same boule. |
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Keywords: | A1. Crystal morphology A2. Sublimation growth B1. Aluminum nitride |
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