On the isothermal closed space sublimation growth of CdSe using a mixed source for selenium |
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Authors: | Erick M Larramendi Z-B Karla Gutiérrez Osvaldo de Melo Ulrike Woggon Detlef Schikora Klaus Lischka |
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Institution: | 1. Physics Faculty – ICTM, University of Havana, Colina Universitaria, C.P. 10400, Havana, Cuba;2. Technische Universität Berlin, Institut für Optik und Atomare Physik, Strasse des 17. Juni 135, D-10623 Berlin, Germany;3. Department Physik, Universität Paderborn, Warburger Strasse 100, D-33098 Paderborn, Germany |
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Abstract: | The use of a selenium–tellurium (SeTe) mixed source in the isothermal close space sublimation growth of CdSe epilayers is considered. The epitaxial growth was performed in flowing helium by sequential exposures of the substrate to vapors of the mixed SeTe source and elemental cadmium at temperatures within 350–410 °C. In spite of the mixed source (proposed to decrease the partial pressure of Se), tellurium incorporation was small and CdSexTe(1−x) (x∼0.98) epilayers were obtained. X-ray diffraction reciprocal space mapping shows the existence of hexagonal inclusions mainly on the (1 1 1) facets of the cubic phase. Material deposition on areas of the graphite crucible exposed to the sources, contamination of the Cd source and large growth rates suggest the existence of a selenium transport process via graphite. This transport might be the result of the combination of selenium deposition on graphite with a subsequent activated desorption of selenium under cadmium exposure. It affects Cd source purity and growth kinetic bringing on a modification of the usual atomic layer deposition regimen; however, a reproducible growth rate of the epilayers was obtained. |
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Keywords: | A3 Physical vapor deposition B1 Cadmium compounds B2 Semiconducting II&ndash VI materials |
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