Enlarged ferromagnetic hysteresis in InMnP:Be epilayers formed by thermal diffusion using MBE-grown Mn/InP:Be bilayers |
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| Authors: | Yoon Shon Sejoon Lee Tae Won Kang Youngmin Lee Seung-Woong Lee Jin Dong Song Hyung-Jun Kim Jeong Ju Lee Im Taek Yoon |
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| Institution: | 1. Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea;2. Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea;3. Department of Physics, Konkuk University, Seoul 143-701, Republic of Korea;4. Center for Spintronics Research, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;5. Department of Physics and Research Institute of Natural Science, Gyeongsang National University, Jinju 660-701, Republic of Korea |
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| Abstract: | The p-type InMnP:Be epilayers, which were prepared by thermal diffusion of Mn through in-situ deposition of Mn layer using molecular beam epitaxy (MBE) onto MBE-grown InP:Be epilayers and subsequent in-situ annealing at 300–350 °C, were investigated. InMnP:Be epilayers prepared by the above sequence clearly showed the Mn-related emission band at 1.1–1.2 eV, which indicates the effective incorporation of Mn2+ ions into the host layer InP:Be. The samples demonstrated very large ferromagnetic hysteresis loops with enhanced coercivity, and the ferromagnetic-to-paramagnetic transition of the samples was observed to occur at ∼85 K. These results suggest that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be effectively formed by the above-mentioned sequential in-situ processes. |
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| Keywords: | A1 Diffusion A3 Molecular beam epitaxy B1 Manganites B2 Magnetic materials B2 Semiconducting indium phosphide |
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