The impact of an intermediate temperature buffer on the growth of GaN on an AlN template by hydride vapor phase epitaxy |
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Authors: | Youngji Cho Jun-Seok Ha Mina Jung Hyun-Jae Lee Seunghwan Park Jinsub Park Katsushi Fujii Ryuichi Toba Samnyung Yi Gyung-Suk Kil Jiho Chang Takafumi Yao |
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Institution: | 1. Department of Nano-semiconductor Engineering, KMU, Busan 606-791, Republic of Korea;2. Division of Electrical and Electronics Engineering, KMU, Busan 606-791, Republic of Korea;3. Center for Interdisciplinary Research, Tohoku University, Sendai, Japan;4. Dowa Electronics Materials Co. Ltd., Tokyo, Japan |
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Abstract: | The present study focused on the effect of an intermediate-temperature (IT; ∼900 °C) buffer layer on GaN films, grown on an AlN/sapphire template by hydride vapor phase epitaxy (HVPE). In this paper, the surface morphology, structural quality, residual strain, and luminescence properties are discussed in terms of the effect of the buffer layer. The GaN film with an IT-buffer revealed a relatively lower screw-dislocation density (3.29×107 cm−2) and a higher edge-dislocation density (8.157×109 cm−2) than the GaN film without an IT-buffer. Moreover, the IT-buffer reduced the residual strain and improved the luminescence. We found that the IT-buffer played an important role in the reduction of residual strain and screw-dislocation density in the overgrown layer through the generation of edge-type dislocations and the spontaneous treatment of the threading dislocation by interrupting the growth and increasing the temperature. |
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Keywords: | A1 Threading dislocation A3 Hydride vapor phase epitaxy A3 Intermediate-temperature buffer layer B1 Gallium nitride |
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