|
|||||
|
|
Numerical simulation of a new SiC growth system by the dual-directional sublimation method |
|
| Authors: | Xuejiang Chen Shin-ichi Nishizawa Koichi Kakimoto |
| Institution: | 1. Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan;2. National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba 305-8568, Japan |
| Abstract: | A new SiC growth system using the dual-directional sublimation method was investigated in this study. Induction heating and thermal conditions were computed and analyzed by using a global simulation model, and then the values of growth rate and shear stress in a growing crystal were calculated and compared with those in a conventional system. The results showed that the growth rate of SiC single crystals can be increased by twofold by using the dual-directional sublimation method with little increase in electrical power consumption and that thermal stresses can be reduced due to no constraint of the crucible lid and low temperature gradient in crystals. |
| Keywords: | A1 Computer simulation A1 Heat transfer A1 Substrates A2 Growth from vapor |
| 本文献已被 ScienceDirect 等数据库收录！ | |