Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE |
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Authors: | Tim Bohnen Hina AshrafGerbe WG van Dreumel Sjoerd VerhagenJan L Weyher Paul R HagemanElias Vlieg |
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Institution: | Radboud University Nijmegen, Institute for Molecules and Materials, P.O. Box 9010, 6500 GL Nijmegen, The Netherlands |
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Abstract: | The main limitation in the application of hydride vapor phase epitaxy for the large scale production of thick free-standing GaN substrates is the so-called parasitic deposition, which limits the growth time and wafer thickness by blocking the gallium precursor inlet. By utilizing Cl2 instead of the usual HCl gas for the production of the gallium chlorine precursor, we found a rapid increase in growth rate from ∼80 to ∼400 μm/h for an equally large flow of 25 sccm. This allowed us to grow, without any additional optimization, 1.2 mm thick high quality GaN wafers, which spontaneously lifted off from their 0.3° mis-oriented GaN on sapphire HCl-based HVPE templates. These layers exhibited clear transparencies, indicating a high purity, dislocation densities in the order of 106 cm−2, and narrow rocking curve XRD FWHMs of 54 and 166 arcsec in for the 0002 and 101−5 directions, respectively. |
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Keywords: | A3 Hydride vapor phase epitaxy B1 Nitrides B2 Semiconducting gallium compounds |
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