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| 低温生长GaAs在Nd∶YVO4激光器中调Q特性的研究 | |
| 引用本文： | 姜其畅,卓壮,王勇刚,李健,苏艳丽,马骁宇,张志刚,王清月.低温生长GaAs在Nd∶YVO4激光器中调Q特性的研究[J].光子学报,2006,35(8):1133-1136. |
| 作者姓名： | 姜其畅 卓壮 王勇刚 李健 苏艳丽 马骁宇 张志刚 王清月 |
| 作者单位： | 1. 山东师范大学物理与电子科学学院,济南,250014 2. 山东师范大学物理与电子科学学院,济南,250014;山大鲁能科技有限责任公司,济南,250100 3. 中国科学院半导体研究所,北京,100083 4. 天津大学精密仪器与光电子工程学院超快激光实验室,天津,300072 |
| 基金项目： | 山东省科技厅科技攻关项目 |
| 摘 要： | 采用一种新型的被动调Q饱和吸收体,低温生长GaAs薄膜，实现了半导体抽运Nd∶YVO4激光器的调Q运转.研究了激光器的调Q特性,调Q抽运阈值为2W.在抽运功率9.2 W时，获得的最短脉冲半峰全宽为15 ns，最大单脉冲能量为4.84 μJ，最高峰值功率为330 W，最大平均输出功率为1.16 W；脉冲重复频率在220 kHz到360 kHz之间. |
| 关 键 词： | 低温生长GaAs 被动调Q Nd∶YVO4激光器 半导体抽运 |
| 收稿时间： | 2005-04-18 |
| 修稿时间： | 2005年4月18日 |
Study on the Characteristics of Q-switching Nd:YVO4 Laser with GaAs Grown at Low Temperature |
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| Jiang Qichang,Zhuo Zhuang,Wang Yonggang,Li Jian,Su Yanli,Ma Xiaoyu,Zhang Zhigang,Wang Qingyue.Study on the Characteristics of Q-switching Nd:YVO4 Laser with GaAs Grown at Low Temperature[J].Acta Photonica Sinica,2006,35(8):1133-1136. | |
| Authors: | Jiang Qichang Zhuo Zhuang Wang Yonggang Li Jian Su Yanli Ma Xiaoyu Zhang Zhigang Wang Qingyue |
| Institution: | (1 College of Physics and Electronics，Shandong Normal University,Jinan 250014 ) (2 Shanda Luneng Information &; Technology Co.Ltd,Jinan 250100 ) (3 Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083) (4 College of Precision Instrument and Opto Electronics Engineering,Institute of laser and Optoelectronics, Ultra fast Laser Lab,Tianjin University,Tianjin 300072) |
| Abstract: | A diode-pumped passively Q-switched Nd∶YVO4 laser was demonstrated by using GaAs film growing at a low temperature. The threshold power at the Q-switching is 2 W. The shortest pulse duration is 15 ns. The highest single pulse energy is 4.84 μJ and the highest peak power is 330 W. The repetition rate varies between 220 kHz and 360 kHz and the highest average output power is 1.16 W. |
| Keywords: | GaAs grown at low temperature Passive Q-switch Nd∶YVO4 laser Laser diode pumping |
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