Effect of impurity scattering of a tunneling electron on variable-range hopping conduction

Variable-range hopping conduction in semiconductors is determined by the asymptotic behavior of impurity wave functions on distances much larger than mean interimpurity separation. Scattering of an impurity electron by the other impurities situated near its tunneling path is shown to result in a correction a to electron localization lengtha. This correction depends on the impurity scattering length and impurity concentrationN and may be of the order ofa(Na³) ora(Na³)^1/2.