ULSI介质CMP用大粒径硅溶胶纳米研磨料的合成及应用研究

针对超大规模集成电路多层互连结构中介质CMP抛光速率低，急需的大粒径硅溶胶研磨料，本文采用改进的粒径生长控制工艺制备介质CMP用大粒径硅溶胶，并采用TEM、激光粒度分析仪和Zeta电位测试仪等先进手段对其粒径大小、粒径分布和稳定性进行了表征。以低分散度硅溶胶纳米研磨料配制抛光浆料进行了二氧化硅介质的CMP研究，结果表明，平均粒径103．4nm的硅溶胶浆料的去除速率达630nm／min，有效解决了二氧化硅介质CMP低速率的难题。

Study on Preparation and Application of Silica Sol Nano-abrasive with Large Particle for CMP of Dielectric in ULSI

For chemical mechanical polishing of ILD(Interlevel Dielectric) in ULSI, the silica sol nano-abrasive with large particle was strongly required because of lower polishing rate. The preparation and CMP(Chemical Mechanical Polishing) application of silica sol nano-abrasive with large particle were studied by the improved controlling process of particle growing, and they were characterized by TEM, Laser Particles Size Analyzer and Zeta potential Analyzer. Results show that the silica sol with about 100 nm is stable and low polydispersity. The CMP experiment results also show that polishing rate is improved to be 630 nm/min when the silica sols with the size of 103.4 nm are used as polishing abrasive, which effectively resolve the problem of lower polishing rate.