Estimation of plasma frequency from IR reflectivity in doped GaAs |
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| Affiliation: | 1. Diamond Light Source Ltd., Harwell Science and Innovation Campus, OX11 0DE Didcot, Oxfordshire, UK;2. Department of Nuclear Reactors, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, V Holešovičkách 2, 180 00 Prague 8, Czech Republic;3. Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology, Institute of Nuclear and Physical Engineering, Ilkovičova 3, 812 19 Bratislava, Slovak Republic;1. Department of Physics, Capital Normal University, Beijing Key Lab for Metamaterials and Devices, Key Lab of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Technology, Beijing 100048, China;2. College of Information Science and Engineering, Henan University of Technology, Key Laboratory of Grain Information Processing and Control, Ministry of Education, Zhengzhou, Henan 450001, China;3. Department of Physics, Harbin Institute of Technology, Harbin 150001, China;4. Nanophotonics Research Center, Shenzhen University, Shenzhen 518060, China;1. School of Physics, University of Hyderabad, Hyderabad, India;2. Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, Canada;3. Department of Physics, Indian Institute of Science, Bangalore, India;4. Department of Physics, Guru Jambheshwar University of Science & Technology, Hisar-125001, Haryana, India |
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| Abstract: | The influence of the phonon-plasmon coupling on the IR reflectivity spectra of doped GaAs is examined for the range of plasma frequencies which are close to the optical phonon frequencies. An analytic expression for the plasma frequency in terms of the frequencies of the reflectivity minima, which requires knowledge of the dielectric constant at the reflectivity minima and the carrier lifetime, is obtained. Empirical relations are suggested to estimate the required dielectric constant. Lifetime is estimated by a graphical method. These relations are used to estimate the plasma frequencies from the reported reflectivity spectra of doped GaAs samples. |
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