On the optimum thickness of a photoconductive detector: A 0.1 eV HgCdTe detector

The effect of the variation of detector thickness on the voltage responsivity, g-r noise and the specific detectivity of a 0.1 eV HgCdTe photoconductive detector has been calculated. The results of these calculations show that the optimum thickness of the detector should be determined by the diffusion length of the minority carriers rather than the optical absorption coefficient.