| Comparison between Two Kinds of Semiconductor Absorbers for Mode-Locking in Nd：YVO4 Laser |
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| 引用本文： | 王翠,王勇刚,马晓宇,刘阳,孙利群,田芊,张志刚,王清月.Comparison between Two Kinds of Semiconductor Absorbers for Mode-Locking in Nd：YVO4 Laser[J].中国物理快报,2006,23(3):616-618. |
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| 作者姓名： | 王翠 王勇刚 马晓宇 刘阳 孙利群 田芊 张志刚 王清月 |
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| 作者单位： | [1]Institute of Semiconductors, Chinese Academy of Sciences, Beifing 100083 [2]State Key Laboratory of Precision Measurement Technology and Instrument, Tsinghua University, Beijing 100084 [3]Ultrafast Laser Laboratory, School of Precision Instrument and Optoelectronics Engineering, University ol Tianjin, Tianjin 300072 |
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| 摘 要： | We have demonstrated passive mode-locking in a diode-end-pumped Nd：YV04 laser using two kinds of semiconductor absorbers whose relaxation region comes from Ino.2sGao.75As grown at low temperature （LT） and GaAs/air interface respectively. Mode-locking, using absorbers of the GaAs/air interface relaxation region, has the characteristics of less Q-switching tendency and higher average output power than that using absorbers of LT In0.25Ga0.75As relaxation region, but is not as stable as the latter.
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| 关 键 词： | 半导体吸收材料 模式锁定 Nd：YVO4激光器 松弛域 Q调制 |
| 收稿时间： | 2005-09-22 |
| 修稿时间： | 2005-09-22 |
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