Depth profile measurement by secondary ion mass spectrometry |
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Authors: | M. Moens M. van Craen F.C. Adams |
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Affiliation: | Department of Chemistry, University of Antwerp (U.I.A.) B-2610 Wilrijk Belgium |
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Abstract: | The possibilities of measuring depth profiles by secondary ion mass spectrometry are evaluated. The influence of different instrumental and experimental parameters on depth resolution in the profiles are studied: the effects of primary ion beam characteristics, reactive gas adsorption and mechanical aperturing in secondary ion extraction are discussed. Beam effects are studied from the point of view of surface damage. The effects of secondary processes, such as crater edge effects, element mixing, preferential sputtering, background signals, (residual) gas contamination and ion-induced topographical and compositional changes are studied for thin metal and binary materials. |
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