| 基于速度饱和的CMOS倒相器延迟模型 |
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| 引用本文： | 宋任儒,阮刚,梁擎擎,ReinhardStreiter,ThomasOtto,ThomasGessner.基于速度饱和的CMOS倒相器延迟模型[J].半导体学报,2000,21(7):711-716. |
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| 作者姓名： | 宋任儒 阮刚 梁擎擎 ReinhardStreiter ThomasOtto ThomasGessner |
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| 作者单位： | 复旦大学电子工程系专用集成电路与系统国家重点实验室!上海200433，中国，复旦大学电子工程系专用集成电路与系统国家重点实验室!上海200433，中国，复旦大学电子工程系专用集成电路与系统国家重点实验室!上海200433，中国，Chemnitz技术大学微技术中心!D-09107德国，Chemnitz技术大 |
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| 摘 要： | 提出了一个新的小尺寸CMOS倒相器延迟模型,它考虑了速度饱和效应以及非阶梯的输入信号对延迟的影响并给出了倒相器快输入响应与慢输入响应的判据,模型计算结果与SPICEBSIM1模型的模拟结果吻合得很好.
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| 关 键 词： | 速度饱和 倒相器 延迟 |
| 文章编号： | 0253-4177(2000)07-0711-06 |
| 修稿时间： | 1999-03-19 |
Comprehensive Delay Model for CMOS Inverters Based on Velocity Saturation |
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| SONG Ren\|ru,RUAN Gang and LIANG Qing\|qing.Comprehensive Delay Model for CMOS Inverters Based on Velocity Saturation[J].Chinese Journal of Semiconductors,2000,21(7):711-716. |
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| Authors: | SONG Ren\|ru RUAN Gang and LIANG Qing\|qing |
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| Institution: | SONG Ren-ru
,RUAN Gang
,LIANG Qing-qing
(Department of Electronic Engineering,ASIC and System State Key Laboratory, Fudan Uniuersity,Shanghai 200433, China)Reinhard Streiter
, Thomas Otto
,Thomas Gessner
(Center of Microtechnology, Technical Uniuersity of Chemnitz,D-09107 Germany) |
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| Abstract: | An improved analytical model is developed to predict the propagation delay of a small size CMOS inverter, which includes the effect of the velocity saturation and the influence of input waveform slope.The criteria for fast\|input response and slow\|input response of inverter are derived as well.A good agreement has been achieved between the presented model and SPICE BSIM1 model. |
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| Keywords: | velocity saturation inverter delay |
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