Gigahertz modulation of GaAs-based bipolar cascade vertical cavity surface-emitting lasers |
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| Authors: | Siskaninetz W J Ehret J E Albrecht J D Bedford R G Nelson T R Lott J A |
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| Institution: | Air Force Research Laboratory and Electrical and Computer Engineering Department, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433, USA. |
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| Abstract: | The high-frequency modulation characteristics of GaAs-based bipolar cascade vertical cavity surface-emitting lasers operating at 980 nm with GaAs tunnel junctions and p-doped Al0.98Ga0.02As oxide apertures have been measured. We achieve -3 dB laser output modulations of 6.5 GHz for two-stage and 9.4 GHz for three-stage devices in response to small-signal current injection at an operating temperature of -50 degrees C. |
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