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Trimethylphosphite stabilized disilver(I) methanedisulfonates as MOCVD precursors
Authors:Xian TaoKe-Cheng Shen  Meng FengQing-Yun Tang  Jiang-Tao FangYu-Long Wang  Ying-Zhong Shen
Affiliation:Applied Chemistry Department, School of Material Science & Engineering, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, PR China
Abstract:New disilver(I) methanedisulfonates complexes {CH2(SO3)2Ag2·[P(OMe)3]n} (n = 2, 2a; n = 4, 2b; n = 6, 2c) were prepared by reacting [CH2(SO3)2Ag2], which could be synthesized from methanedisulfonic acid and Ag2CO3 in water, with trimethylphosphite in dichloromethane. The molecular structure of 2a was determined using X-ray single crystal analysis. Complex 2a exhibits an infinite chain structure with eight-membered rings (AgOSOAgOSO) fully interconnected by the third sulfonic O atoms. Complex 2b was used to deposit silver films by metal organic chemical vapor deposition (MOCVD) for the first time. The silver film obtained was characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersion X-ray analysis (EDX).
Keywords:Silver   Methanedisulfonates   Precursor   MOCVD   Deposition   Trimethylphosphite
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