(1) Department of Electrical Engineering, Jordan University of Science and Technology, 3030, , 22110, Jordan
Abstract:
The linewidth enhancement factor (α) of inhomogenously broadened InAs/GaAs quantum dot (QD) lasers is studied taking into account the effect of the multi-discrete QD energy levels for both electrons and holes. The effect of size-fluctuation and the separation between the energy states on α for different applied bias is studied. Very small value of α (∼0.3) is obtained at high-applied bias. This value is smaller than the linewidth enhancement factor in quantum well lasers. An empirical formula for the linewidth enhancement factor is also derived.
