Auger transitions in narrow-gap semiconductors with lax band structure

Auger recombination and ionisation rates are calculated in narrow-gap semiconductor with Lax band structure⁸ such as Pb_1?xSn_xTe, Pb_1?xSn_xSe, Bi_1?xSb_x. Both low-energy (T_e? ε_g) and high-energy (ε_F ? ε_g or Te ? ε) regions are taken into consideration. In the former case we have corrected the results obtained by number of authors^3,4. The latter situation may take place in pinch channel or at the high level of laser exitation. Here we have derived the results except for constant numerical coefficient. We consider the two-particle Auger-process proposed by Emtage³ as well as three-particle ones including additional collision with acoustical phonon, charged impurity or neutral defect. The dependence of Auger transition rates upon the carrier concentration is mainly of the power-type in all variants.