Calculation of optical matrix elements in Gallium Arsenide

Results are presented for optical matrix elements calculated numerically for a 2 × 2 lattice of delta-function impurity potentials in Gallium Arsenide. The calculations show clearly the change in the character of the state with increasing binding energy and particularly the increase in importance of the higher minima over the absolute conduction band minimum at г. Comparison with some experimental work is made from which good qualitative agreement is clear.