Electron light scattering from doped silicon |
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| Authors: | I.P. Ipatova A.V. Subashiev V.A. Voitenko |
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| Affiliation: | Ioffe Physical Technical Institute, Leningrad 194021, USSR |
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| Abstract: | The light scattering from homogeneous intervalley fluctuations of free carriers density in n-Si is calculated for any degree of the electron gas degeneration. Effects of the external stress on the scattering spectrum are considered. Results allow to explain the basic qualitative results of the experiment [7]. |
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