Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing

Infrared optical properties of extremely heavily doped n-type Si, obtained by ion implantation and laser annealing, were studied. A new relation between free carrier effective mass (m¹) and carrier concentration (10¹⁹ ?5 × 10²¹cm^-3) was obtained. The value of m¹ increases significantly with the increase of carrier concentration, when carrier concentration exceeds 10²¹cm^-3. The result is discussed in relation to the occupation of electrons in a new valley of the conduction band.