Electronic properties and atomic arrangement of the Ag/Si(111) interface

Variations of the work function and photoelectric yield spectra of a Ag/Si(111) system were investigated as a function of Ag film thickness and substrate temperatures. It was clarified that monolayer deposition of Ag onto Si at room temperature cause a decrease in the work function, while the deposition at 500°C did an increase. The results could be closely correlated with the atomic arrangement derived from low-energy ion scattering spectroscopy and low-energy electron diffraction.