Raman spectra of Si-implanted silicon on sapphire |
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| Authors: | Y Ohmura T Inoue T Yoshii |
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| Institution: | Toshiba R and D Center, Toshiba Corporation, 1 Komukai-Toshiba-Cho, Saiwai-Ku, Kawasaki 210, Japan |
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| Abstract: | Raman scattering from Si-implantation-amorphized and subsequently thermally recrystallized silicon on sapphire (SOS) shows that optical phonon frequencies of silicon well correlate with the recrystallization temperature rather than the epitaxial temperature. This implies that the strain in as-epitaxial SOS has been relieved and replaced by the one which depends upon the recrystallization temperature. |
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