Luminescence of isoelectronic traps in laser-annealed,tellurium-coated zinc sulphide

The production of a single-tellurium and paired-tellurium isoelectronic trap luminescence centres in zinc sulphide by the Q-switched ruby laser irradiation of layers of thermally-deposited tellurium on the surface of zinc sulphide is described. Evidence is presented for surface melting of the zinc sulphide caused by the laser radiation. For the production of isoelectronic traps by the above-mentioned process the existence of an optimum energy of the laser radiation has been shown and its approximate value determined.