| 具有多等位环的高压屏蔽新结构MER-LDMOS耐压分析 |
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| 引用本文： | 陈万军,张波,李肇基. 具有多等位环的高压屏蔽新结构MER-LDMOS耐压分析[J]. 半导体学报, 2006, 27(7): 1274-1279 |
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| 作者姓名： | 陈万军 张波 李肇基 |
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| 作者单位： | 电子科技大学IC设计中心，成都 610054;电子科技大学IC设计中心，成都 610054;电子科技大学IC设计中心，成都 610054 |
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| 基金项目： | 国家高技术研究发展计划(863计划) , 国家自然科学基金 , 国家预研基金 |
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| 摘 要： | 提出一种多等位环(multiple equipotential rings,MER)的高压屏蔽新结构MER-LDMOS,并解释了该结构的屏蔽机理,通过2D器件模拟验证了屏蔽机理的正确性.讨论了p-top剂量、等位环长度、等位环间距以及氧化层厚度对MER-LDMOS击穿电压的影响.结果表明MER-LDMOS突破常规LDMOS高压屏蔽的能力,击穿电压较常规LDMOS提高一倍以上;同时,该结构具有工艺简单、工艺容差大、反向泄漏电流小等优点,为高压集成电路中高压屏蔽的问题提供了一种新的解决方案.
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| 关 键 词： | 高压互连线 等位环 击穿电压 LDMOS 屏蔽机理 结构 耐压 分析 Interconnection High Voltage Influence Rings Multiple 方案 问题 中高压 高压集成电路 泄漏电流 容差 工艺 能力 LDMOS 结果 影响 |
| 文章编号： | 0253-4177(2006)07-1274-06 |
| 收稿时间： | 2005-12-26 |
| 修稿时间： | 2006-02-20 |
A Novel Structure with Multiple Equipotential Rings for Shielding the Influence of a High Voltage Interconnection |
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| Chen Wanjun,Zhang Bo and Li Zhaoji. A Novel Structure with Multiple Equipotential Rings for Shielding the Influence of a High Voltage Interconnection[J]. Chinese Journal of Semiconductors, 2006, 27(7): 1274-1279 |
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| Authors: | Chen Wanjun Zhang Bo Li Zhaoji |
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| Affiliation: | Center of IC Design,University of Electronic Science and Technology of China,Chengdu 610054,China;Center of IC Design,University of Electronic Science and Technology of China,Chengdu 610054,China;Center of IC Design,University of Electronic Science and Technology of China,Chengdu 610054,China |
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| Abstract: | A novel structure with multiple equipotential rings(MER-LDMOS) for shielding the influence of a high voltage interconnection(HVI) is proposed,and its shielding model is explained and proved with 2D device simulation.The influences of various factors on the breakdown voltage of MER-LDMOS are discussed in detail,including the p-top dose,the length of equipotential ring,the distance between the equipotential rings,and the thickness of the SiO_2.A significant increase in the breakdown voltage is realized using the MER-LDMOS structure,and its breakdown voltage increases by more than 100% compared with that of conventional LDMOS.Furthermore,the proposed structure has the advantages of simple fabrication,large process tolerance,and small leakage current.It is a new method for shielding the influence a high voltage interconnection in a high voltage integrated circuit. |
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| Keywords: | high voltage interconnection equipotential rings breakdown voltage LDMOS |
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