IR absorption in p-type pb0.97Sn0.03Se |
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Authors: | A.K. Jain B.K. Gupta O.P. Agnihotri |
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Affiliation: | Physics Department and Center of Energy Studies, I.I.T., New Delhi-110016, India |
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Abstract: | IR absorption in p-type melt grown Pb0.97Sn0.03Se crystals is reported. The results for the room temperature absorption coefficient (α) in the wavelength region 2–15 μm are analysed. The indirect absorption edge is found to be at 0.26 eV for this ternary alloy. In the longwavelength region α is found to be proportional to λ2, in agreement with the classical free carrier absorption expression. The conductivity effective mass of holes is found to be 0.067 m0 at 300°K. |
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