Thin zirconium nitride films prepared by plasma-enhanced CVD |
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| Authors: | H. Wendel H. Suhr |
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| Affiliation: | (1) Department of Organic Chemistry, University of Tübingen, Auf der Morgenstelle 18, W-7400 Tübingen, Fed. Rep. Germany |
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| Abstract: | Thin films of zirconium nitride have been deposited at temperatures as low as 573 K by PECVD using tetrakis(diethylamido)zirconium, Zr[N(C2H5)2]4 as precursor. The influence of the various experimental parameters on film properties and deposition rates has been studied. Under most experimental conditions hard coatings of good adherence and low carbon contamination resulted. |
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| Keywords: | 81.15.G 52.90.+z 68.55.+b |
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