| InGaAsSb量子阱的MBE生长和光致发光特性研究 |
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| 引用本文： | 邹永刚,刘国军,马晓辉,史全林,李占国,李林,隋庆学,张志敏.InGaAsSb量子阱的MBE生长和光致发光特性研究[J].光散射学报,2011,23(4):336-339. |
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| 作者姓名： | 邹永刚 刘国军 马晓辉 史全林 李占国 李林 隋庆学 张志敏 |
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| 作者单位： | 1. 长春理工大学高功率半导体激光国家重点实验室,长春,130022
2. 总装备部装甲兵驻长春地区军事代表室,长春,130103 |
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| 基金项目： | 国家自然科学基金(60976038,61006039,60976056) |
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| 摘 要： | 采用分子束外延(MBE)技术生长InGaAsSb多量子阱结构,利用光致发光光谱对材料的生长特性进行了研究.研究了衬底温度对材料激发光谱强度的影响,探索了发光波长与有源层量子阱厚度的关系.发现外延生长时衬底温度对材料的质量有重要影响；在一定范围内,量子阱厚度不断增加会导致材料的光致发光波长增加.
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| 关 键 词： | InGaAsSb 量子阱 分子束外延 光致发光 |
| 收稿时间： | 2011/7/23 |
MBE Growth and Photoluminescence characterization of InGaAsSb quantum well |
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| ZOU Yong-gang
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MA Xiao-hui
,
SHI Quan-lin
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LI Zhan-guo
,
LI Lin
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LIU Guo-jun
,
SUI Qing-xue
,
ZHANG Zhi-min.MBE Growth and Photoluminescence characterization of InGaAsSb quantum well[J].Chinese Journal of Light Scattering,2011,23(4):336-339. |
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| Authors: | ZOU Yong-gang MA Xiao-hui SHI Quan-lin LI Zhan-guo LI Lin LIU Guo-jun SUI Qing-xue ZHANG Zhi-min |
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| Institution: | 1.National Key Lab of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China;2.The Changchun Regional Office of the Armored Forces Representative Bureau,the Equipment Headquarters of the PLA,Changchun 130103,China) |
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| Abstract: | The growth and chracterization of InGaAsSb quantum well structrure were conducted by moleculer beam epitaxy(MBE) and photoluminescence(PL).We studied the issues on the relation between the quality of InGaAsSb quantum well material and substrate temperature,well thickness.It is found that the material quality depends on the substrate temperature,and PL wavelength of material increases with the increasement of InGaAsSb quantum well thickness. |
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| Keywords: | InGaAsSb quanstum well MBE photoluminescence |
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