首页 | 本学科首页   官方微博 | 高级检索  
     


Resonant tunnelling in O-D systems
Authors:A. Ramdane  G. Faini  H. Launois
Affiliation:(1) Laboratoire de Microstructures et Microélectronique, CNRS, 196 avenue H. Ravéra, F-92220 Bagneux, France;(2) Present address: CNET, 197 avenue H. Ravéra, F-92220 Bagneux, France
Abstract:O-D energy spectroscopy by means of transport and magneto-transport measurements has been carried out in double barrier resonant tunnelling heterostructures. Two models for the fabrication imposed lateral confining potential have been considered to account for the resonant lines associated with tunnelling of electrons through the O-D states of the quantum well. Preliminary measurements in a magnetic field are consistent with the values of magnetic length and undepleted conducting core radius in our structure, and indicate that up to 6 T the energy spectrum is dominated by spatial quantization. Single-charging effects in our structures are discussed.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号