One-dimensional gallium nitride micro/nanostructures synthesized by a space-confined growth technique |
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Authors: | X Xiang H Zhu |
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Institution: | (1) State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, P.O. Box 98, Beijing, 100029, P.R. China;(2) Research Center of Materials Science, Beijing Institute of Technology, Beijing, 100081, P.R. China |
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Abstract: | Hexagonal GaN prismatic sub-micro rods and cone nanowires have been synthesized in a large scale by a novel and controllable
space-confined growth method. The as-synthesized GaN products are highly crystalline with a wurtzite structure. The prismatic
rods have lengths of 15∼20 μm and diameters of 400∼500 nm enclosed by hexagonal smooth side surfaces and a pyramidal end.
And the cone nanowires have average diameters of 150∼200 nm and lengths up to several tens of μm with a cone tip. The photoluminescence
(PL) studies reveal prominent band-gap UV emission properties of GaN products and narrow FWHM, indicating the excellent luminescent
performance and high crystal quality. For field emission characteristic of GaN nanowires, the turn-on field is about 9.5 V/μm
and the current density reaches 1.0 mA/cm2 at an electric field of 18 V/ μm. The contrast experiments indicate a novel growth control can be achieved by using a graphite
tube as reaction vessel. The sealed graphite tube combined with metallic initiator is greatly responsible for large-scale
and uniform preparation of GaN prismatic rods and cone nanowires. Highly symmetric GaN hexagonal micropyramids are grown on
a bare Si substrate. The growth mechanism and the control function of the graphite tube are demonstrated. These low-dimensional
structures not only enrich semiconducting GaN family, but also are good building blocks for optoelectronic devices.
PACS 81.10.Bk; 81.07.-b; 81.05.Ea |
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